Gated-controlled rectification of a self-assembled monolayer-based transistor

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Standard

Gated-controlled rectification of a self-assembled monolayer-based transistor. / Mentovich, Elad D.; Rosenberg-Shraga, Natalie; Kalifa, Itsik; Gozin, Michael; Mujica, Vladimiro; Hansen, Thorsten; Richter, Shachar.

I: Journal of Physical Chemistry C, Bind 117, Nr. 16, 2013, s. 8468-8474.

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt

Harvard

Mentovich, ED, Rosenberg-Shraga, N, Kalifa, I, Gozin, M, Mujica, V, Hansen, T & Richter, S 2013, 'Gated-controlled rectification of a self-assembled monolayer-based transistor', Journal of Physical Chemistry C, bind 117, nr. 16, s. 8468-8474. https://doi.org/10.1021/jp311875g

APA

Mentovich, E. D., Rosenberg-Shraga, N., Kalifa, I., Gozin, M., Mujica, V., Hansen, T., & Richter, S. (2013). Gated-controlled rectification of a self-assembled monolayer-based transistor. Journal of Physical Chemistry C, 117(16), 8468-8474. https://doi.org/10.1021/jp311875g

Vancouver

Mentovich ED, Rosenberg-Shraga N, Kalifa I, Gozin M, Mujica V, Hansen T o.a. Gated-controlled rectification of a self-assembled monolayer-based transistor. Journal of Physical Chemistry C. 2013;117(16):8468-8474. https://doi.org/10.1021/jp311875g

Author

Mentovich, Elad D. ; Rosenberg-Shraga, Natalie ; Kalifa, Itsik ; Gozin, Michael ; Mujica, Vladimiro ; Hansen, Thorsten ; Richter, Shachar. / Gated-controlled rectification of a self-assembled monolayer-based transistor. I: Journal of Physical Chemistry C. 2013 ; Bind 117, Nr. 16. s. 8468-8474.

Bibtex

@article{517ebc7b3a0b41e989175e03ddfb2ef2,
title = "Gated-controlled rectification of a self-assembled monolayer-based transistor",
abstract = "A vertical gate symmetrical molecular transistor is demonstrated. It includes self-assembled monolayer of ferrocene molecules chemically bonded to be a flat Au source and Au nanoparticles drain electrodes while gated with the central gate electrode. Using this configuration, we show that negative differential resistance, symmetrical behavior, and rectification effects can be tuned by controlling the gate voltage. The I-V curves shift from symmetric to strongly rectifying over a gate voltage range of a few tenths of volts around a threshold value where the junction behaves symmetrically. This is due to charging of the nanoparticle contact, which modifies the spatial profile of the voltage across the junction, a fact that we have included in a simple theoretical model that explains our experimental results quite well. Our device design affords a new way to fine-tune the rectification of molecular devices in a way that does not necessarily involve the Coulomb charging of the wire.",
author = "Mentovich, {Elad D.} and Natalie Rosenberg-Shraga and Itsik Kalifa and Michael Gozin and Vladimiro Mujica and Thorsten Hansen and Shachar Richter",
year = "2013",
doi = "10.1021/jp311875g",
language = "English",
volume = "117",
pages = "8468--8474",
journal = "The Journal of Physical Chemistry Part C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "16",

}

RIS

TY - JOUR

T1 - Gated-controlled rectification of a self-assembled monolayer-based transistor

AU - Mentovich, Elad D.

AU - Rosenberg-Shraga, Natalie

AU - Kalifa, Itsik

AU - Gozin, Michael

AU - Mujica, Vladimiro

AU - Hansen, Thorsten

AU - Richter, Shachar

PY - 2013

Y1 - 2013

N2 - A vertical gate symmetrical molecular transistor is demonstrated. It includes self-assembled monolayer of ferrocene molecules chemically bonded to be a flat Au source and Au nanoparticles drain electrodes while gated with the central gate electrode. Using this configuration, we show that negative differential resistance, symmetrical behavior, and rectification effects can be tuned by controlling the gate voltage. The I-V curves shift from symmetric to strongly rectifying over a gate voltage range of a few tenths of volts around a threshold value where the junction behaves symmetrically. This is due to charging of the nanoparticle contact, which modifies the spatial profile of the voltage across the junction, a fact that we have included in a simple theoretical model that explains our experimental results quite well. Our device design affords a new way to fine-tune the rectification of molecular devices in a way that does not necessarily involve the Coulomb charging of the wire.

AB - A vertical gate symmetrical molecular transistor is demonstrated. It includes self-assembled monolayer of ferrocene molecules chemically bonded to be a flat Au source and Au nanoparticles drain electrodes while gated with the central gate electrode. Using this configuration, we show that negative differential resistance, symmetrical behavior, and rectification effects can be tuned by controlling the gate voltage. The I-V curves shift from symmetric to strongly rectifying over a gate voltage range of a few tenths of volts around a threshold value where the junction behaves symmetrically. This is due to charging of the nanoparticle contact, which modifies the spatial profile of the voltage across the junction, a fact that we have included in a simple theoretical model that explains our experimental results quite well. Our device design affords a new way to fine-tune the rectification of molecular devices in a way that does not necessarily involve the Coulomb charging of the wire.

U2 - 10.1021/jp311875g

DO - 10.1021/jp311875g

M3 - Journal article

AN - SCOPUS:84876822695

VL - 117

SP - 8468

EP - 8474

JO - The Journal of Physical Chemistry Part C

JF - The Journal of Physical Chemistry Part C

SN - 1932-7447

IS - 16

ER -

ID: 209793519