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Gate-tunable ultrahigh photoresponsivity of 2D heterostructures based on few layer MoS2 and solution-processed rGO. / Yang, Juehan; Huo, Nengjie; Li, Yan; Jiang, Xiang-Wei; Li, Tao; Li, Renxiong; Lu, Fangyuan; Fan, Chao; Li, Bo; Nørgaard, Kasper; Laursen, Bo Wegge; Wei, Zhongming; Li, Jingbo; Li, Shu-Shen.
I:
Advanced Electronic Materials, Bind 1, Nr. 10, 1500267, 2015.
Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Harvard
Yang, J, Huo, N, Li, Y, Jiang, X-W, Li, T, Li, R, Lu, F, Fan, C, Li, B, Nørgaard, K
, Laursen, BW, Wei, Z, Li, J & Li, S-S 2015, '
Gate-tunable ultrahigh photoresponsivity of 2D heterostructures based on few layer MoS2 and solution-processed rGO',
Advanced Electronic Materials, bind 1, nr. 10, 1500267.
https://doi.org/10.1002/aelm.201500267APA
Yang, J., Huo, N., Li, Y., Jiang, X-W., Li, T., Li, R., Lu, F., Fan, C., Li, B., Nørgaard, K.
, Laursen, B. W., Wei, Z., Li, J., & Li, S-S. (2015).
Gate-tunable ultrahigh photoresponsivity of 2D heterostructures based on few layer MoS2 and solution-processed rGO.
Advanced Electronic Materials,
1(10), [1500267].
https://doi.org/10.1002/aelm.201500267Vancouver
Yang J, Huo N, Li Y, Jiang X-W, Li T, Li R o.a.
Gate-tunable ultrahigh photoresponsivity of 2D heterostructures based on few layer MoS2 and solution-processed rGO.
Advanced Electronic Materials. 2015;1(10). 1500267.
https://doi.org/10.1002/aelm.201500267Author
Yang, Juehan ; Huo, Nengjie ; Li, Yan ; Jiang, Xiang-Wei ; Li, Tao ; Li, Renxiong ; Lu, Fangyuan ; Fan, Chao ; Li, Bo ; Nørgaard, Kasper ; Laursen, Bo Wegge ; Wei, Zhongming ; Li, Jingbo ; Li, Shu-Shen. / Gate-tunable ultrahigh photoresponsivity of 2D heterostructures based on few layer MoS2 and solution-processed rGO. I: Advanced Electronic Materials. 2015 ; Bind 1, Nr. 10.
Bibtex
@article{56f3fac723db497893eddf7f9c82e39f,
title = "Gate-tunable ultrahigh photoresponsivity of 2D heterostructures based on few layer MoS2 and solution-processed rGO",
author = "Juehan Yang and Nengjie Huo and Yan Li and Xiang-Wei Jiang and Tao Li and Renxiong Li and Fangyuan Lu and Chao Fan and Bo Li and Kasper N{\o}rgaard and Laursen, {Bo Wegge} and Zhongming Wei and Jingbo Li and Shu-Shen Li",
year = "2015",
doi = "10.1002/aelm.201500267",
language = "English",
volume = "1",
journal = "Advanced Electronic Materials",
issn = "2199-160X",
publisher = "Wiley-VCH",
number = "10",
}
RIS
TY - JOUR
T1 - Gate-tunable ultrahigh photoresponsivity of 2D heterostructures based on few layer MoS2 and solution-processed rGO
AU - Yang, Juehan
AU - Huo, Nengjie
AU - Li, Yan
AU - Jiang, Xiang-Wei
AU - Li, Tao
AU - Li, Renxiong
AU - Lu, Fangyuan
AU - Fan, Chao
AU - Li, Bo
AU - Nørgaard, Kasper
AU - Laursen, Bo Wegge
AU - Wei, Zhongming
AU - Li, Jingbo
AU - Li, Shu-Shen
PY - 2015
Y1 - 2015
U2 - 10.1002/aelm.201500267
DO - 10.1002/aelm.201500267
M3 - Journal article
VL - 1
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
SN - 2199-160X
IS - 10
M1 - 1500267
ER -
